Additional information
| Categories |
Transistors – Bipolar (BJT) – Single, Pre-Biased |
|---|---|
| Packaging |
Tape & Box (TB) |
| Part Status |
Obsolete |
| Transistor Type |
NPN – Pre-Biased |
| Current Collector Ic Max |
100mA |
| Voltage Collector Emitter Breakdown Max |
50V |
| Resistor Base R1 |
4.7 kOhms |
| Resistor Emitter Base R2 |
10 kOhms |
| Dc Current Gain Hfe Min Ic Vce |
30 @ 5mA, 10V |
| Vce Saturation Max Ib Ic |
250mV @ 300µA, 10mA |
| Current Collector Cutoff Max |
500nA |
| Frequency Transition |
150MHz |
| Power Max |
300mW |
| Mounting Type |
Through Hole |
| Package Case |
3-SSIP |
| Supplier Device Package |
NS-B1 |
| Short Description |
TRANS PREBIAS NPN 300MW NS-B1 |
| Description |
Pre-Biased Bipolar Transistor (BJT) NPN – Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1 |
| Datasheets | https://app.spb-global.com/product/SPB_UNR421x Series_discon.pdf |
| Rohs Status |
Request Inventory Verification |
| Lead Free Status |
Lead Free |
| Manufacturer |
Panasonic Electronic Components |
| Manufacturer Part Number |
UNR421F00A |
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