Additional information
Categories |
Transistors – Bipolar (BJT) – Single, Pre-Biased |
---|---|
Packaging |
Tape & Box (TB) |
Part Status |
Obsolete |
Transistor Type |
NPN – Pre-Biased |
Current Collector Ic Max |
100mA |
Voltage Collector Emitter Breakdown Max |
50V |
Resistor Base R1 |
4.7 kOhms |
Resistor Emitter Base R2 |
10 kOhms |
Dc Current Gain Hfe Min Ic Vce |
30 @ 5mA, 10V |
Vce Saturation Max Ib Ic |
250mV @ 300µA, 10mA |
Current Collector Cutoff Max |
500nA |
Frequency Transition |
150MHz |
Power Max |
300mW |
Mounting Type |
Through Hole |
Package Case |
3-SSIP |
Supplier Device Package |
NS-B1 |
Short Description |
TRANS PREBIAS NPN 300MW NS-B1 |
Description |
Pre-Biased Bipolar Transistor (BJT) NPN – Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1 |
Datasheets | https://app.spb-global.com/product/SPB_UNR421x Series_discon.pdf |
Rohs Status |
Request Inventory Verification |
Lead Free Status |
Lead Free |
Manufacturer |
Panasonic Electronic Components |
Manufacturer Part Number |
UNR421F00A |
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