Additional information
| Categories |
Transistors – FETs, MOSFETs – Single |
|---|---|
| Input Capacitance Ciss Max Vds |
640pF @ 10V |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Fet Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain To Source Voltage Vdss |
30V |
| Current Continuous Drain Id 25c |
6A (Ta) |
| Drive Voltage Max Rds On Min Rds On |
4.5V, 10V |
| Rds On Max Id Vgs |
20mOhm @ 3A, 10V |
| Vgsth Max Id |
2.5V @ 1mA |
| Gate Charge Qg Max Vgs |
14nC @ 10V |
| Vgs Max |
±20V |
| Power Dissipation Max |
700mW (Ta) |
| Fet Feature |
– |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
VS-6 (2.9×2.8) |
| Package Case |
SOT-23-6 Thin, TSOT-23-6 |
| Short Description |
MOSFET N-CH 30V 6A VS-6 |
| Description |
N-Channel 30V 6A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9×2.8) |
| Rohs Status |
RoHS Compliant |
| Lead Free Status |
Lead Free |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Manufacturer Part Number |
TPC6011(TE85L,F,M) |
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