TK31E60X

$0.00

MOSFET N-CH 600V 30.8A TO220

2051 in stock

SKU: TK31E60X Category:

Additional information

Categories

Transistors – FETs, MOSFETs – Single

Input Capacitance Ciss Max Vds

3000pF @ 300V

Packaging

Tube

Part Status

Active

Fet Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain To Source Voltage Vdss

600V

Current Continuous Drain Id 25c

30.8A (Ta)

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

88mOhm @ 9.4A, 10V

Vgsth Max Id

3.5V @ 1.5mA

Gate Charge Qg Max Vgs

65nC @ 10V

Vgs Max

±30V

Power Dissipation Max

230W (Tc)

Fet Feature

Super Junction

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package Case

TO-220-3

Short Description

MOSFET N-CH 600V 30.8A TO220

Description

N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-220

Datasheets https://app.spb-global.com/product/SPB_docget.jsp?did=14963&prodName=TK31E60X
Rohs Status

RoHS Compliant

Lead Free Status

Lead Free

Manufacturer

Toshiba Semiconductor and Storage

Manufacturer Part Number

TK31E60X,S1X

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