Additional information
| Categories |
Transistors – Bipolar (BJT) – Arrays, Pre-Biased |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Transistor Type |
1 NPN, 1 PNP – Pre-Biased (Dual) |
| Current Collector Ic Max |
100mA |
| Voltage Collector Emitter Breakdown Max |
50V |
| Resistor Base R1 |
4.7kOhms |
| Resistor Emitter Base R2 |
4.7kOhms |
| Dc Current Gain Hfe Min Ic Vce |
30 @ 10mA, 5V |
| Vce Saturation Max Ib Ic |
300mV @ 250µA, 5mA |
| Current Collector Cutoff Max |
500nA |
| Frequency Transition |
200MHz, 250MHz |
| Power Max |
100mW |
| Mounting Type |
Surface Mount |
| Package Case |
SOT-563, SOT-666 |
| Supplier Device Package |
ES6 |
| Short Description |
PNP + NPN BRT Q1BSR4.7KOHM Q1BER |
| Description |
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP – Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 100mW Surface Mount ES6 |
| Rohs Status |
RoHS non-compliant |
| Lead Free Status |
Lead Free |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Manufacturer Part Number |
RN4901FE,LF(CT |
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