Additional information
| Categories |
Transistors – Bipolar (BJT) – Arrays, Pre-Biased |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Transistor Type |
2 PNP – Pre-Biased (Dual) |
| Current Collector Ic Max |
100mA |
| Voltage Collector Emitter Breakdown Max |
50V |
| Resistor Base R1 |
10kOhms |
| Resistor Emitter Base R2 |
10kOhms |
| Dc Current Gain Hfe Min Ic Vce |
50 @ 10mA, 5V |
| Vce Saturation Max Ib Ic |
300mV @ 250µA, 5mA |
| Current Collector Cutoff Max |
100nA (ICBO) |
| Frequency Transition |
200MHz |
| Power Max |
200mW |
| Mounting Type |
Surface Mount |
| Package Case |
6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package |
US6 |
| Short Description |
TRANS 2PNP PREBIAS 0.2W US6 |
| Description |
Pre-Biased Bipolar Transistor (BJT) 2 PNP – Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6 |
| Rohs Status |
RoHS Compliant |
| Lead Free Status |
Lead Free |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Manufacturer Part Number |
RN2962(TE85L,F) |
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