Additional information
Categories |
Transistors – FETs, MOSFETs – Single |
---|---|
Packaging |
Bulk |
Part Status |
Obsolete |
Fet Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain To Source Voltage Vdss |
60V |
Current Continuous Drain Id 25c |
220A (Tc) |
Drive Voltage Max Rds On Min Rds On |
10V |
Rds On Max Id Vgs |
3mOhm @ 75A, 10V |
Vgsth Max Id |
4V @ 250µA |
Gate Charge Qg Max Vgs |
180nC @ 10V |
Vgs Max |
±20V |
Input Capacitance Ciss Max Vds |
10.76pF @ 25V |
Fet Feature |
– |
Power Dissipation Max |
283W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D2PAK-3 |
Package Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Short Description |
MOSFET N-CH 60V 220A D2PAK-3 |
Description |
N-Channel 60V 220A (Tc) 283W (Tc) Surface Mount D2PAK-3 |
Rohs Status |
ROHS3 Compliant |
Manufacturer |
Rochester Electronics, LLC |
Manufacturer Part Number |
NVB5860NT4G |
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