NTD2955-1G

$0.00

POWER FIELD-EFFECT TRANSISTOR, 1

2010 in stock

SKU: NTD2955-1G Category:

Additional information

Categories

Transistors – FETs, MOSFETs – Single

Packaging

Bulk

Part Status

Active

Fet Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain To Source Voltage Vdss

60V

Current Continuous Drain Id 25c

12A (Ta)

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

180mOhm @ 6A, 10V

Vgsth Max Id

4V @ 250µA

Gate Charge Qg Max Vgs

30nC @ 10V

Vgs Max

±20V

Input Capacitance Ciss Max Vds

750pF @ 25V

Fet Feature

Power Dissipation Max

55W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-Pak

Package Case

TO-251-3 Short Leads, IPak, TO-251AA

Short Description

POWER FIELD-EFFECT TRANSISTOR, 1

Description

P-Channel 60V 12A (Ta) 55W (Tj) Through Hole I-Pak

Datasheets https://app.spb-global.com/product/SPB_ONSM-S-A0002914145-1.pdf?t.download=true&u=5oefqw
Rohs Status

Request Inventory Verification

Manufacturer

ON Semiconductor

Manufacturer Part Number

NTD2955-1G

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