NGTB40N120FL2WG

$0.00

INSULATED GATE BIPOLAR TRANSISTO

3755 in stock

SKU: NGTB40N120FL2WG Category:

Additional information

Categories

Transistors – IGBTs – Single

Packaging

Bulk

Part Status

Active

Igbt Type

Trench Field Stop

Voltage Collector Emitter Breakdown Max

1.2V

Current Collector Ic Max

80A

Current Collector Pulsed Icm

200A

Vceon Max Vge Ic

2.4V @ 15V, 40A

Power Max

535W

Switching Energy

3.4mJ (on), 1.1mJ (off)

Input Type

Standard

Gate Charge

313nC

Td Onoff 25c

116ns/286ns

Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time Trr

240ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package Case

TO-247-3

Supplier Device Package

TO-247

Short Description

INSULATED GATE BIPOLAR TRANSISTO

Description

IGBT Trench Field Stop 1.2V 80A 535W Through Hole TO-247

Datasheets https://app.spb-global.com/product/SPB_ONSM-S-A0000775277-1.pdf?t.download=true&u=5oefqw
Rohs Status

Request Inventory Verification

Manufacturer

Rochester Electronics, LLC

Manufacturer Part Number

NGTB40N120FL2WG

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