MOSFET N-CH 600V 2.2A IPAK

$0.00

MOSFET N-CH 600V 2.2A IPAK

3938 in stock

SKU: NDD02N60Z-1G Category:

Additional information

Categories

Transistors – FETs, MOSFETs – Single

Packaging

Tube

Part Status

Obsolete

Fet Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain To Source Voltage Vdss

600V

Current Continuous Drain Id 25c

2.2A (Tc)

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

4.8Ohm @ 1A, 10V

Vgsth Max Id

4.5V @ 50µA

Gate Charge Qg Max Vgs

10.1nC @ 10V

Vgs Max

±30V

Input Capacitance Ciss Max Vds

274pF @ 25V

Fet Feature

Power Dissipation Max

57W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package Case

TO-251-3 Short Leads, IPak, TO-251AA

Short Description

MOSFET N-CH 600V 2.2A IPAK

Description

N-Channel 600V 2.2A (Tc) 57W (Tc) Through Hole I-PAK

Rohs Status

ROHS3 Compliant

Manufacturer

Rochester Electronics, LLC

Manufacturer Part Number

NDD02N60Z-1G

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