Additional information
Categories |
Transistors – Bipolar (BJT) – Single |
---|---|
Packaging |
Bulk |
Part Status |
Active |
Transistor Type |
NPN – Darlington |
Current Collector Ic Max |
2A |
Voltage Collector Emitter Breakdown Max |
100V |
Vce Saturation Max Ib Ic |
3V @ 40mA, 4A |
Current Collector Cutoff Max |
20µA |
Dc Current Gain Hfe Min Ic Vce |
1000 @ 2A, 3V |
Power Max |
20W |
Frequency Transition |
25MHz |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package |
DPAK |
Short Description |
POWER BIPOLAR TRANSISTOR, 2A, NP |
Description |
Bipolar (BJT) Transistor NPN – Darlington 100V 2A 25MHz 20W Surface Mount DPAK |
Datasheets | https://app.spb-global.com/product/SPB_ONSMS36983-1.pdf?t.download=true&u=5oefqw |
Rohs Status |
Request Inventory Verification |
Manufacturer |
Rochester Electronics, LLC |
Manufacturer Part Number |
NJVMJD112T4G |
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