MJD112T4G

$0.00

POWER BIPOLAR TRANSISTOR, 2A, NP

866 in stock

SKU: MJD112T4G Category:

Additional information

Categories

Transistors – Bipolar (BJT) – Single

Packaging

Bulk

Part Status

Active

Transistor Type

NPN – Darlington

Current Collector Ic Max

2A

Voltage Collector Emitter Breakdown Max

100V

Vce Saturation Max Ib Ic

3V @ 40mA, 4A

Current Collector Cutoff Max

20µA

Dc Current Gain Hfe Min Ic Vce

1000 @ 2A, 3V

Power Max

20W

Frequency Transition

25MHz

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

Short Description

POWER BIPOLAR TRANSISTOR, 2A, NP

Description

Bipolar (BJT) Transistor NPN – Darlington 100V 2A 25MHz 20W Surface Mount DPAK

Datasheets https://app.spb-global.com/product/SPB_ONSMS36983-1.pdf?t.download=true&u=5oefqw
Rohs Status

Request Inventory Verification

Manufacturer

Rochester Electronics, LLC

Manufacturer Part Number

NJVMJD112T4G

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