Additional information
Categories |
Transistors – FETs, MOSFETs – Single |
---|---|
Input Capacitance Ciss Max Vds |
490pF @ 300V |
Packaging |
Tube |
Part Status |
Active |
Fet Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain To Source Voltage Vdss |
600V |
Current Continuous Drain Id 25c |
7A (Ta) |
Drive Voltage Max Rds On Min Rds On |
10V |
Rds On Max Id Vgs |
650mOhm @ 3.5A, 10V |
Vgsth Max Id |
4.5V @ 350µA |
Gate Charge Qg Max Vgs |
16nC @ 10V |
Vgs Max |
±30V |
Power Dissipation Max |
30W (Tc) |
Fet Feature |
– |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220SIS |
Package Case |
TO-220-3 Full Pack |
Short Description |
MOSFET N-CH 600V 7A TO220SIS |
Description |
N-Channel 600V 7A (Ta) 30W (Tc) Through Hole TO-220SIS |
Rohs Status |
RoHS Compliant |
Lead Free Status |
Lead Free |
Manufacturer |
Toshiba Semiconductor and Storage |
Manufacturer Part Number |
TK7A60W5,S5VX |
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