Additional information
| Categories |
Transistors – FETs, MOSFETs – Single |
|---|---|
| Packaging |
Tube |
| Part Status |
Active |
| Fet Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain To Source Voltage Vdss |
200V |
| Current Continuous Drain Id 25c |
5.9A (Tc) |
| Drive Voltage Max Rds On Min Rds On |
10V |
| Rds On Max Id Vgs |
400mOhm @ 3.5A, 10V |
| Vgsth Max Id |
4V @ 250µA |
| Gate Charge Qg Max Vgs |
43nC @ 10V |
| Vgs Max |
±20V |
| Input Capacitance Ciss Max Vds |
800pF @ 25V |
| Fet Feature |
– |
| Power Dissipation Max |
35W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-220-3 |
| Package Case |
TO-220-3 Full Pack, Isolated Tab |
| Short Description |
MOSFET N-CH 200V 5.9A TO220-3 |
| Description |
N-Channel 200V 5.9A (Tc) 35W (Tc) Through Hole TO-220-3 |
| Datasheets | https://app.spb-global.com/product/SPB_91148.pdf |
| Video | |
| Rohs Status |
ROHS3 Compliant |
| Lead Free Status |
Lead Free |
| Manufacturer |
Vishay Siliconix |
| Manufacturer Part Number |
IRFI630GPBF |
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