IRFBC20L

$0.00

MOSFET N-CH 600V 2.2A I2PAK

2040 in stock

SKU: IRFBC20L Category:

Additional information

Categories

Transistors – FETs, MOSFETs – Single

Packaging

Tube

Part Status

Obsolete

Fet Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain To Source Voltage Vdss

600V

Current Continuous Drain Id 25c

2.2A (Tc)

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

4.4Ohm @ 1.3A, 10V

Vgsth Max Id

4V @ 250µA

Gate Charge Qg Max Vgs

18nC @ 10V

Vgs Max

±20V

Input Capacitance Ciss Max Vds

350pF @ 25V

Fet Feature

Power Dissipation Max

3.1W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Short Description

MOSFET N-CH 600V 2.2A I2PAK

Description

N-Channel 600V 2.2A (Tc) 3.1W (Ta), 50W (Tc) Through Hole I2PAK

Datasheets https://app.spb-global.com/product/SPB_91107.pdf
Video
Rohs Status

RoHS non-compliant

Lead Free Status

Contains Lead

Manufacturer

Vishay Siliconix

Manufacturer Part Number

IRFBC20L

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