Additional information
| Categories |
Transistors – FETs, MOSFETs – Single |
|---|---|
| Input Capacitance Ciss Max Vds |
3240pF @ 100V |
| Packaging |
Tube |
| Part Status |
Active |
| Fet Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain To Source Voltage Vdss |
650V |
| Current Continuous Drain Id 25c |
31.2A (Tc) |
| Drive Voltage Max Rds On Min Rds On |
10V |
| Rds On Max Id Vgs |
110mOhm @ 12.7A, 10V |
| Vgsth Max Id |
4.5V @ 1.3mA |
| Gate Charge Qg Max Vgs |
118nC @ 10V |
| Vgs Max |
±20V |
| Power Dissipation Max |
277.8W (Tc) |
| Fet Feature |
– |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
PG-TO220-3 |
| Package Case |
TO-220-3 |
| Short Description |
MOSFET N-CH 650V 31.2A TO220-3 |
| Description |
N-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3 |
| Rohs Status |
ROHS3 Compliant |
| Lead Free Status |
Lead Free |
| Manufacturer |
Infineon Technologies |
| Manufacturer Part Number |
IPP65R110CFDAAKSA1 |
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