Additional information
| Categories |
Transistors – FETs, MOSFETs – Single |
|---|---|
| Input Capacitance Ciss Max Vds |
3980pF @ 50V |
| Packaging |
Tube |
| Part Status |
Active |
| Fet Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain To Source Voltage Vdss |
100V |
| Current Continuous Drain Id 25c |
80A (Tc) |
| Drive Voltage Max Rds On Min Rds On |
6V, 10V |
| Rds On Max Id Vgs |
8.6mOhm @ 73A, 10V |
| Vgsth Max Id |
3.5V @ 75µA |
| Gate Charge Qg Max Vgs |
55nC @ 10V |
| Vgs Max |
±20V |
| Power Dissipation Max |
125W (Tc) |
| Fet Feature |
– |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
PG-TO262-3 |
| Package Case |
TO-262-3 Long Leads, I²Pak, TO-262AA |
| Short Description |
MOSFET N-CH 100V 80A TO262-3 |
| Description |
N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3 |
| Rohs Status |
ROHS3 Compliant |
| Lead Free Status |
Lead Free |
| Manufacturer |
Infineon Technologies |
| Manufacturer Part Number |
IPI086N10N3GXKSA1 |
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