IPI086N10N

$0.00

MOSFET N-CH 100V 80A TO262-3

2729 in stock

SKU: IPI086N10N Category:

Additional information

Categories

Transistors – FETs, MOSFETs – Single

Input Capacitance Ciss Max Vds

3980pF @ 50V

Packaging

Tube

Part Status

Active

Fet Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain To Source Voltage Vdss

100V

Current Continuous Drain Id 25c

80A (Tc)

Drive Voltage Max Rds On Min Rds On

6V, 10V

Rds On Max Id Vgs

8.6mOhm @ 73A, 10V

Vgsth Max Id

3.5V @ 75µA

Gate Charge Qg Max Vgs

55nC @ 10V

Vgs Max

±20V

Power Dissipation Max

125W (Tc)

Fet Feature

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Short Description

MOSFET N-CH 100V 80A TO262-3

Description

N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3

Datasheets https://app.spb-global.com/product/SPB_IPP086N10N3 G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ac5c8fa1358
Rohs Status

ROHS3 Compliant

Lead Free Status

Lead Free

Manufacturer

Infineon Technologies

Manufacturer Part Number

IPI086N10N3GXKSA1

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