MOSFET N-CH 600V 9A TO252-3

$0.00

MOSFET N-CH 600V 9A TO252-3

2342 in stock

SKU: IPD60R385CPATMA1 Category:

Additional information

Categories

Transistors – FETs, MOSFETs – Single

Input Capacitance Ciss Max Vds

790pF @ 100V

Packaging

Tape & Reel (TR)

Part Status

Not For New Designs

Fet Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain To Source Voltage Vdss

600V

Current Continuous Drain Id 25c

9A (Tc)

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

385mOhm @ 5.2A, 10V

Vgsth Max Id

3.5V @ 340µA

Gate Charge Qg Max Vgs

22nC @ 10V

Vgs Max

±20V

Power Dissipation Max

83W (Tc)

Fet Feature

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Short Description

MOSFET N-CH 600V 9A TO252-3

Description

N-Channel 600V 9A (Tc) 83W (Tc) Surface Mount PG-TO252-3

Rohs Status

ROHS3 Compliant

Lead Free Status

Lead Free

Manufacturer

Infineon Technologies

Manufacturer Part Number

IPD60R385CPATMA1

Reviews

There are no reviews yet.

Be the first to review “MOSFET N-CH 600V 9A TO252-3”
Translate »