Additional information
| Categories |
Transistors – FETs, MOSFETs – Single |
|---|---|
| Input Capacitance Ciss Max Vds |
342pF @ 100V |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Fet Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain To Source Voltage Vdss |
500V |
| Current Continuous Drain Id 25c |
9A (Tc) |
| Drive Voltage Max Rds On Min Rds On |
13V |
| Rds On Max Id Vgs |
650mOhm @ 1.8A, 13V |
| Vgsth Max Id |
3.5V @ 150µA |
| Gate Charge Qg Max Vgs |
15nC @ 10V |
| Vgs Max |
±20V |
| Power Dissipation Max |
69W (Tc) |
| Fet Feature |
– |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PG-TO252-3-344 |
| Package Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Short Description |
MOSFET N-CH 500V 9A TO252-3 |
| Description |
N-Channel 500V 9A (Tc) 69W (Tc) Surface Mount PG-TO252-3-344 |
| Rohs Status |
ROHS3 Compliant |
| Lead Free Status |
Lead Free |
| Manufacturer |
Infineon Technologies |
| Manufacturer Part Number |
IPD50R650CEAUMA1 |
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