IPB60R360P7ATMA1

$0.00

MOSFET N-CH 600V 9A D2PAK

2252 in stock

SKU: IPB60R360P7ATMA1 Category:

Additional information

Categories

Transistors – FETs, MOSFETs – Single

Input Capacitance Ciss Max Vds

555pF @ 400V

Packaging

Tape & Reel (TR)

Part Status

Active

Fet Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain To Source Voltage Vdss

600V

Current Continuous Drain Id 25c

9A (Tc)

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

360mOhm @ 2.7A, 10V

Vgsth Max Id

4V @ 140µA

Gate Charge Qg Max Vgs

13nC @ 10V

Vgs Max

±20V

Power Dissipation Max

41W (Tc)

Fet Feature

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Short Description

MOSFET N-CH 600V 9A D2PAK

Description

N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount D²PAK (TO-263AB)

Datasheets https://app.spb-global.com/product/SPB_Infineon-IPB60R360P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a86f0020487
Rohs Status

ROHS3 Compliant

Lead Free Status

Lead Free

Manufacturer

Infineon Technologies

Manufacturer Part Number

IPB60R360P7ATMA1

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