Additional information
| Categories |
Transistors – FETs, MOSFETs – Single |
|---|---|
| Input Capacitance Ciss Max Vds |
1400pF @ 100V |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Not For New Designs |
| Fet Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain To Source Voltage Vdss |
600V |
| Current Continuous Drain Id 25c |
20.2A (Tc) |
| Drive Voltage Max Rds On Min Rds On |
10V |
| Rds On Max Id Vgs |
190mOhm @ 9.5A, 10V |
| Vgsth Max Id |
3.5V @ 630µA |
| Gate Charge Qg Max Vgs |
63nC @ 10V |
| Vgs Max |
±20V |
| Power Dissipation Max |
151W (Tc) |
| Fet Feature |
– |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D²PAK (TO-263AB) |
| Package Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Short Description |
MOSFET N-CH 600V 20.2A D2PAK |
| Description |
N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount D²PAK (TO-263AB) |
| Rohs Status |
ROHS3 Compliant |
| Lead Free Status |
Lead Free |
| Manufacturer |
Infineon Technologies |
| Manufacturer Part Number |
IPB60R190C6ATMA1 |
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