Additional information
| Categories |
Transistors – FETs, MOSFETs – Single |
|---|---|
| Packaging |
Bulk |
| Part Status |
Obsolete |
| Fet Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain To Source Voltage Vdss |
100V |
| Current Continuous Drain Id 25c |
35A (Tc) |
| Drive Voltage Max Rds On Min Rds On |
10V |
| Rds On Max Id Vgs |
26mOhm @ 35A, 10V |
| Vgsth Max Id |
4V @ 39µA |
| Gate Charge Qg Max Vgs |
31nC @ 10V |
| Vgs Max |
±20V |
| Input Capacitance Ciss Max Vds |
2.07pF @ 50V |
| Fet Feature |
– |
| Power Dissipation Max |
71W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D²PAK (TO-263AB) |
| Package Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Short Description |
MOSFET N-CH 100V 35A D2PAK |
| Description |
N-Channel 100V 35A (Tc) 71W (Tc) Surface Mount D²PAK (TO-263AB) |
| Rohs Status |
Not Applicable |
| Manufacturer |
Rochester Electronics, LLC |
| Manufacturer Part Number |
IPB26CN10NGATMA1 |
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