IPB036N12N3 G

$0.00

MOSFET N-CH 120V 180A TO263-7

2831 in stock

SKU: IPB036N12N3 G Category:

Additional information

Categories

Transistors – FETs, MOSFETs – Single

Input Capacitance Ciss Max Vds

13800pF @ 60V

Packaging

Tape & Reel (TR)

Part Status

Active

Fet Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain To Source Voltage Vdss

120V

Current Continuous Drain Id 25c

180A (Tc)

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

3.6mOhm @ 100A, 10V

Vgsth Max Id

4V @ 270µA

Gate Charge Qg Max Vgs

211nC @ 10V

Vgs Max

±20V

Power Dissipation Max

300W (Tc)

Fet Feature

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-7

Package Case

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Short Description

MOSFET N-CH 120V 180A TO263-7

Description

N-Channel 120V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7

Datasheets https://app.spb-global.com/product/SPB_IPB036N12N3 G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56
Rohs Status

ROHS3 Compliant

Lead Free Status

Lead Free

Manufacturer

Infineon Technologies

Manufacturer Part Number

IPB036N12N3GATMA1

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