IPB027N10N3G

$0.00

MOSFET N-CH 100V 120A D2PAK

2310 in stock

SKU: IPB027N10N3G Category:

Additional information

Categories

Transistors – FETs, MOSFETs – Single

Input Capacitance Ciss Max Vds

14800pF @ 50V

Packaging

Tape & Reel (TR)

Part Status

Active

Fet Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain To Source Voltage Vdss

100V

Current Continuous Drain Id 25c

120A (Tc)

Drive Voltage Max Rds On Min Rds On

6V, 10V

Rds On Max Id Vgs

2.7mOhm @ 100A, 10V

Vgsth Max Id

3.5V @ 275µA

Gate Charge Qg Max Vgs

206nC @ 10V

Vgs Max

±20V

Power Dissipation Max

300W (Tc)

Fet Feature

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Short Description

MOSFET N-CH 100V 120A D2PAK

Description

N-Channel 100V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)

Datasheets https://app.spb-global.com/product/SPB_IPB027N10N3 G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed9348e15ef
Rohs Status

ROHS3 Compliant

Lead Free Status

Lead Free

Manufacturer

Infineon Technologies

Manufacturer Part Number

IPB027N10N3GATMA1

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