IPB025N10N3

$0.00

MOSFET N-CH 100V 180A TO263-7

2863 in stock

SKU: IPB025N10N3 Category:

Additional information

Categories

Transistors – FETs, MOSFETs – Single

Input Capacitance Ciss Max Vds

14800pF @ 50V

Packaging

Tape & Reel (TR)

Part Status

Active

Fet Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain To Source Voltage Vdss

100V

Current Continuous Drain Id 25c

180A (Tc)

Drive Voltage Max Rds On Min Rds On

6V, 10V

Rds On Max Id Vgs

2.5mOhm @ 100A, 10V

Vgsth Max Id

3.5V @ 275µA

Gate Charge Qg Max Vgs

206nC @ 10V

Vgs Max

±20V

Power Dissipation Max

300W (Tc)

Fet Feature

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-7

Package Case

TO-263-7, D²Pak (6 Leads + Tab)

Short Description

MOSFET N-CH 100V 180A TO263-7

Description

N-Channel 100V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7

Datasheets https://app.spb-global.com/product/SPB_IPB025N10N3 G_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ab1d9d51349
Rohs Status

ROHS3 Compliant

Lead Free Status

Lead Free

Manufacturer

Infineon Technologies

Manufacturer Part Number

IPB025N10N3GATMA1

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