Additional information
| Categories |
Transistors – Bipolar (BJT) – Arrays |
|---|---|
| Frequency Transition |
30MHz |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Transistor Type |
2 NPN (Dual) |
| Current Collector Ic Max |
300mA |
| Voltage Collector Emitter Breakdown Max |
20V |
| Vce Saturation Max Ib Ic |
100mV @ 3mA, 30A |
| Current Collector Cutoff Max |
100nA (ICBO) |
| Dc Current Gain Hfe Min Ic Vce |
350 @ 4mA, 2V |
| Power Max |
200mW |
| Mounting Type |
Surface Mount |
| Operating Temperature |
150°C (TJ) |
| Package Case |
6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package |
US6 |
| Short Description |
NPN + NPN IND. TRANSISTOR VCEO20 |
| Description |
Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 300mA 30MHz 200mW Surface Mount US6 |
| Rohs Status |
RoHS non-compliant |
| Lead Free Status |
Lead Free |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Manufacturer Part Number |
HN1C03FU-B,LF |
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