Additional information
Categories |
Transistors – FETs, MOSFETs – Single |
---|---|
Packaging |
Bulk |
Part Status |
Obsolete |
Fet Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain To Source Voltage Vdss |
200V |
Current Continuous Drain Id 25c |
2.8A (Tc) |
Drive Voltage Max Rds On Min Rds On |
10V |
Rds On Max Id Vgs |
2.7Ohm @ 1.4A, 10V |
Vgsth Max Id |
5V @ 250µA |
Gate Charge Qg Max Vgs |
8nC @ 10V |
Vgs Max |
±30V |
Input Capacitance Ciss Max Vds |
250pF @ 25V |
Fet Feature |
– |
Power Dissipation Max |
3.13W (Ta), 52W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D²PAK (TO-263AB) |
Package Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Short Description |
MOSFET P-CH 200V 2.8A D2PAK |
Description |
P-Channel 200V 2.8A (Tc) 3.13W (Ta), 52W (Tc) Surface Mount D²PAK (TO-263AB) |
Rohs Status |
ROHS3 Compliant |
Manufacturer |
Rochester Electronics, LLC |
Manufacturer Part Number |
FQB3P20TM |
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