Additional information
Categories |
Transistors – Bipolar (BJT) – Single, Pre-Biased |
---|---|
Current Collector Cutoff Max |
100nA (ICBO) |
Packaging |
Bulk |
Part Status |
Active |
Transistor Type |
NPN – Pre-Biased |
Current Collector Ic Max |
100mA |
Voltage Collector Emitter Breakdown Max |
50V |
Resistor Base R1 |
2.2 kOhms |
Resistor Emitter Base R2 |
47 kOhms |
Dc Current Gain Hfe Min Ic Vce |
68 @ 5mA, 5V |
Vce Saturation Max Ib Ic |
300mV @ 500µA, 10mA |
Power Max |
200mW |
Frequency Transition |
250MHz |
Mounting Type |
Surface Mount |
Package Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT-23-3 (TO-236) |
Short Description |
0.1A, 50V, NPN |
Description |
Pre-Biased Bipolar Transistor (BJT) NPN – Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3 (TO-236) |
Rohs Status |
ROHS3 Compliant |
Manufacturer |
Rochester Electronics, LLC |
Manufacturer Part Number |
FJV3113RMTF |
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