BSO615C

$0.00

PFET, 3.1A I(D), 60V, 0.11OHM, 2

1665 in stock

SKU: BSO615C Category:

Additional information

Categories

Transistors – FETs, MOSFETs – Arrays

Input Capacitance Ciss Max Vds

380pF, 460pF @ 25V

Packaging

Bulk

Part Status

Active

Fet Type

N and P-Channel

Fet Feature

Logic Level Gate

Drain To Source Voltage Vdss

60V

Current Continuous Drain Id 25c

3.1A (Ta), 2A (Ta)

Rds On Max Id Vgs

110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V

Vgsth Max Id

2V @ 20µA, 2V @ 450µA

Gate Charge Qg Max Vgs

22.5nC, 20nC @ 10V

Operating Temperature

-55°C ~ 150°C (TJ)

Power Max

2W (Ta)

Mounting Type

Surface Mount

Package Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

PG-DSO-8

Manufacturer

Rochester Electronics, LLC

Short Description

PFET, 3.1A I(D), 60V, 0.11OHM, 2

Description

Mosfet Array N and P-Channel 60V 3.1A (Ta), 2A (Ta) 2W (Ta) Surface Mount PG-DSO-8

Datasheets https://app.spb-global.com/product/SPB_Infineon-BSO615CG-DS-v02_01-en.pdf?fileId=db3a304412b407950112b435049f6230
Rohs Status

Not Applicable

Manufacturer Part Number

BSO615CGHUMA1

Reviews

There are no reviews yet.

Be the first to review “BSO615C”
Translate »