Additional information
| Categories |
Transistors – Bipolar (BJT) – Arrays, Pre-Biased |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Part Status |
Not For New Designs |
| Transistor Type |
1 NPN, 1 PNP – Pre-Biased (Dual) |
| Current Collector Ic Max |
100mA |
| Voltage Collector Emitter Breakdown Max |
50V |
| Resistor Base R1 |
2.2kOhms |
| Resistor Emitter Base R2 |
47kOhms |
| Dc Current Gain Hfe Min Ic Vce |
70 @ 5mA, 5V |
| Vce Saturation Max Ib Ic |
300mV @ 500µA, 10mA |
| Current Collector Cutoff Max |
– |
| Frequency Transition |
170MHz |
| Power Max |
250mW |
| Mounting Type |
Surface Mount |
| Package Case |
6-VSSOP, SC-88, SOT-363 |
| Supplier Device Package |
PG-SOT363-6 |
| Short Description |
TRANS NPN/PNP PREBIAS SOT363 |
| Description |
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP – Pre-Biased (Dual) 50V 100mA 170MHz 250mW Surface Mount PG-SOT363-6 |
| Rohs Status |
ROHS3 Compliant |
| Lead Free Status |
Lead Free |
| Manufacturer |
Infineon Technologies |
| Manufacturer Part Number |
BCR08PNH6327XTSA1 |
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