Additional information
| Categories |
Transistors – Bipolar (BJT) – Single |
|---|---|
| Name |
ST MICROELECTRONICS SEMI |
| Packaging |
Tube |
| Part Status |
Active |
| Transistor Type |
NPN – Darlington |
| Current Collector Ic Max |
4A |
| Voltage Collector Emitter Breakdown Max |
350V |
| Vce Saturation Max Ib Ic |
1.5V @ 2mA, 2A |
| Current Collector Cutoff Max |
100µA |
| Dc Current Gain Hfe Min Ic Vce |
2000 @ 2A, 2V |
| Power Max |
100W |
| Frequency Transition |
– |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package Case |
TO-220-3 |
| Supplier Device Package |
TO-220AB |
| Short Description |
TRANS NPN DARL 350V 4A TO-220 |
| Description |
Bipolar (BJT) Transistor NPN – Darlington 350V 4A 100W Through Hole TO-220AB |
| Datasheets | https://app.spb-global.com/product/SPB_2ST501T.pdf |
| Rohs Status |
RoHS Compliant |
| Lead Free Status |
Lead Free |
| Manufacturer |
STMicroelectronics |
| Manufacturer Part Number |
2ST501T |
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