Additional information
| Categories |
Transistors – FETs, MOSFETs – Single |
|---|---|
| Input Capacitance Ciss Max Vds |
550pF @ 25V |
| Packaging |
Bulk |
| Part Status |
Obsolete |
| Fet Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain To Source Voltage Vdss |
500V |
| Current Continuous Drain Id 25c |
5A (Ta) |
| Drive Voltage Max Rds On Min Rds On |
10V |
| Rds On Max Id Vgs |
1.7Ohm @ 2.5A, 10V |
| Vgsth Max Id |
4V @ 1mA |
| Gate Charge Qg Max Vgs |
16nC @ 10V |
| Vgs Max |
±30V |
| Power Dissipation Max |
35W (Tc) |
| Fet Feature |
– |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-220SIS |
| Package Case |
TO-220-3 Full Pack |
| Short Description |
MOSFET N-CH 500V 5A TO220SIS |
| Description |
N-Channel 500V 5A (Ta) 35W (Tc) Through Hole TO-220SIS |
| Datasheets | https://app.spb-global.com/product/SPB_2SK3868.pdf |
| Rohs Status |
Request Inventory Verification |
| Lead Free Status |
Lead Free |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Manufacturer Part Number |
2SK3868(Q,M) |
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