SI4434DY-T1-E3

$0.00

MOSFET N-CH 250V 2.1A 8-SOIC

1000 in stock

SKU: SI4434DY-T1-E3 Category:

Additional information

Categories

Transistors – FETs, MOSFETs – Single

Package Case

8-SOIC (0.154", 3.90mm Width)

Packaging

Tape & Reel (TR)

Part Status

Active

Fet Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain To Source Voltage Vdss

250V

Current Continuous Drain Id 25c

2.1A (Ta)

Drive Voltage Max Rds On Min Rds On

6V, 10V

Rds On Max Id Vgs

155 mOhm @ 3A, 10V

Vgsth Max Id

4V @ 250µA

Gate Charge Qg Max Vgs

50nC @ 10V

Vgs Max

±20V

Fet Feature

Power Dissipation Max

1.56W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Short Description

MOSFET N-CH 250V 2.1A 8-SOIC

Description

N-Channel 250V 2.1A (Ta) 1.56W (Ta) Surface Mount 8-SO

Datasheets https://app.spb-global.com/product/dk_si4434dy.pdf
Video
Rohs Status

RoHS Compliant

Lead Free Status

Lead Free

Manufacturer

Vishay Siliconix

Manufacturer Part Number

SI4434DY-T1-E3

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